InGaAs PIN Photodetector Die
Spectrolab
Telcordia-qualified InGaAs P-I-N photodetector device dies for telecom, laser power monitoring, and test systems, available in 25 µm to 1 mm active area sizes on 2", 3", and 4" InP wafers.
Technical specifications
- Material
- InGaAs P-I-N on InP substrate
- Active Area Sizes
- 25 µm to 1 mm diameter
- Wafer Sizes
- 2", 3", and 4" InP substrates
- Key Characteristics
- Low dark current, low capacitance, high quantum efficiency
- Qualification
- Telcordia qualified
- Applications
- Telecom, laser power monitoring, distributed sensing, test systems
- Available Forms
- Device dies
About
Spectrolab’s InGaAs PiN photodetector device dies are Telcordia-qualified NIR sensors designed for telecommunications, laser power monitoring, optical communications, and precision test systems. Available in active area sizes from 25 µm to 1 mm diameter, these devices exhibit low dark current, low capacitance, and high quantum efficiency for optimum signal detection in the near-infrared spectrum.
Wafer capability includes 2-inch, 3-inch, and 4-inch InP substrates, enabling high-volume, cost-effective production for demanding commercial and military applications. The devices leverage Spectrolab’s proven III-V semiconductor manufacturing processes — the same technology base used for the company’s space solar cells — ensuring high uniformity and reliability across production lots. Suitable for integration into sensor arrays, fiber optic receivers, distributed sensing networks, and optical communications front-ends.
Documentation
No public datasheet yet — request the datasheet / ICD from the supplier.
