Space Radiation Tolerant SRAM Memory
3D Plus (HEICO)
Radiation-tolerant SRAM memory modules for space applications, operating at 3.3V or 5.0V with densities from 4 Mb to 32 Mb and access times of 12 ns. Available in multiple bus widths and SOP packages for harsh space environments.
Technical specifications
- Operating Voltage
- 3.3 V or 5.0 V
- Density Range
- 4 Mb to 32 Mb
- Access Time
- 12 ns
- Data Bus Widths
- x8b, x16b, x32b, x40b
- Temperature Range
- -55°C to +125°C
- TID Tolerance
- >100 krad(Si)
- SEL LETth
- >110 MeV.cm²/mg
- SEU LETth
- 0.7 MeV.cm²/mg
- SEU σsat
- 6E-8 cm²/bit
- Package Types
- SOP 44, SOP 54, SOP 64, SOP 68, SOP 84
About
3D PLUS Space Radiation Tolerant SRAM delivers high-density and high-speed volatile memory solutions optimized for the most demanding space applications including Earth observation, deep space missions, launchers, and navigation satellites. These 3D-stacked modules operate at 3.3V or 5.0V with densities ranging from 4 Mb to 32 Mb and a fast 12 ns access time.
The memories support multiple data bus widths (x8b, x16b, x32b, x40b) and are housed in compact SOP packages (SOP 44 through SOP 84) for surface mount assembly. With an operating temperature range of -55°C to +125°C they are designed to withstand extreme thermal and mechanical space environments.
Radiation performance is exceptional: total ionizing dose tolerance exceeds 100 krad(Si), single event latchup threshold (SEL LETth) exceeds 110 MeV.cm²/mg, and SEU threshold is 0.7 MeV.cm²/mg with a σsat of 6E-8 cm²/bit. These figures make the SRAM family suitable for high-radiation orbital and deep-space environments.
Key part numbers include 3DSR4M08VS1520 (4 Mb), 3DSR8M16VS2505 (8 Mb), 3DSR16M16VS4502 (16 Mb), 3DSR20M40VS2708 (20 Mb), and 3DSR32M32VS8501 (32 Mb). The product line has demonstrated flight heritage across numerous missions since its introduction.
Documentation
No public datasheet yet — request the datasheet / ICD from the supplier.
