10 W GaN High Power Amplifier Packaged HPA11201721QF
Arralis
The HPA11201721QF is a space-qualified 10 W GaN on SiC MMIC high power amplifier in a 7x7 mm hermetically sealed surface-mount ceramic QFN package, covering 17-20.5 GHz with 20 dB gain and over 25% PAE.
Technical specifications
- Technology
- 0.25 um GaN on SiC, space-qualified
- Frequency
- 17-20.5 GHz
- Saturated Output Power
- >10 W (>40 dBm)
- Large-Signal Gain
- 20 dB
- Power-Added Efficiency (PAE)
- >25%
- Supply Voltage (drain)
- 20-30 V
- Drain Current
- 2.5 A
- Package
- 7 x 7 mm hermetically sealed ceramic SMT (QFN)
- Input/Output Impedance
- 50 Ohm
About
The HPA11201721QF is a packaged High Power Amplifier fabricated on space-qualified 0.25 um GaN on SiC process technology, operating from 17-20.5 GHz and delivering over 10 W (>40 dBm) of saturated output power. With 20 dB of large-signal gain and power-added efficiency exceeding 25%, it provides exceptional RF performance in a hermetically sealed, surface-mount ceramic package.
The device is offered in a 7×7 mm QFN hermetically sealed ceramic SMT package, dramatically simplifying board-level integration compared to bare die while maintaining the reliability requirements of space and defense applications. RF ports are matched to 50 Ohm with integrated DC blocking capacitors, and an integrated output power detector assists with system monitoring and gain control. The drain supply voltage ranges from 20-30 VDC at 2.5 A drain current.
The HPA11201721QF is designed for satellite payload integration, Ka-band ground terminals, and military communications systems where hermetic packaging is required for long-term reliability in harsh environments. Its space-qualified GaN on SiC technology delivers the power density and thermal performance needed for high-duty-cycle satellite communications links, while the standard SMT footprint enables high-volume production of satellite sub-systems.
Documentation
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