10 W GaN High Power Amplifier HPA11201721B
Arralis
The HPA11201721B is a space-qualified 10 W GaN on SiC MMIC high power amplifier covering 17-20.5 GHz, with 20 dB large-signal gain, over 25% PAE, and an integrated output power detector, supplied as a bare die for hybrid circuit integration.
Technical specifications
- Technology
- 0.25 um GaN on SiC, space-qualified (UMS GH25-10 process)
- Frequency
- 17-20.5 GHz
- Saturated Output Power
- >10 W (>40 dBm)
- Large-Signal Gain
- 20 dB
- Power-Added Efficiency (PAE)
- >25%
- Supply Voltage (drain)
- 20-30 V
- Drain Current
- 2.5 A
- Input/Output Impedance
- 50 Ohm
- Form Factor
- Bare die
- ITAR Status
- ITAR-free
About
The HPA11201721B is a high-power MMIC amplifier fabricated on space-qualified 0.25 um GaN on SiC process technology, operating from 17-20.5 GHz. It delivers over 10 W (>40 dBm) of saturated output power across the band with a large-signal gain of 20 dB and power-added efficiency (PAE) exceeding 25%, making it one of the most power-efficient K-band HPAs available for satellite applications.
The RF input and output ports are matched to 50 Ohm with integrated DC blocking capacitors, simplifying PCB and MCM integration. An integrated output power detector is included on-die to assist with system integration, gain leveling, and telemetry in satellite payloads and ground stations. The device operates from a 20-30 VDC drain supply drawing 2.5 A.
Supplied as a bare die for integration into hybrid modules, multi-chip modules (MCMs), or custom satellite payload assemblies, the HPA11201721B is ITAR-free and built on the UMS GH25-10 process with proven space heritage. It is suited for Ka-band SATCOM downlink chains, LEO satellite transponders, and high-power RF subsystems where the combination of output power, efficiency, and size is critical.
Documentation
Need the full ICD, test reports or a specific revision? Ask the supplier directly.
