L-band Microwave LNA
Glavkosmos
MMIC LNA is designed for equipment with severe restrictions on the level of power consumption, including: Due to the capabilities of BiKMOS circuitry and the high speed of silicon-germanium transistors, silicon-germanium BiKMOS microwave MMIC LNA has significantly lower power consumption compared to
Technical specifications
- W*H*T
- 5*5*1 mm
- Weight
- 2 g
- Supply voltage
- 3±0,3 V
- Operating temperature range
- -60 - +85 C°
- Case
- 5140.8-АН3 (Metal and ceramic case)
- Consumption current
- 5 mA
- Noise figure
- 1,8 db
- Input Compression Point
- -30 dBm
- Input frequency range
- 0.1…2 GHz
- Operating frequency range
- 0.1…2 GHz
- Gain
- 21 dB
- VSWR (In 50 Ohm tract)
- 2
About
MMIC LNA is designed for equipment with severe restrictions on the level of power consumption, including: Due to the capabilities of BiKMOS circuitry and the high speed of silicon-germanium transistors, silicon-germanium BiKMOS microwave MMIC LNA has significantly lower power consumption compared to gallium arsenide MMIC LNA with comparable noise parameters:
Documentation
No public datasheet yet — request the datasheet / ICD from the supplier.
